SVS65R380DD4TR MOSFET. Datasheet pdf. Equivalent
Type Designator: SVS65R380DD4TR
Marking Code: 65R380D4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 20 nC
trⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO252
SVS65R380DD4TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVS65R380DD4TR Datasheet (PDF)
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SVS65R240FJD(F)(D)(L8A)(T)D4 20A, 650V MOS 2 SVS65R240FJD(F)(D)(L8A)(T)D4 N 1MOSFET MOS 123TO-220FJD-3L 3SVS65R240FJD(F)
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SVS65R400D(FJH)(FJD)(L8A)E3 11A, 650V MOS 2SVS65R400D(FJH)(FJD)(L8A)E3 N MOSFET MOS 1 SVS65R400D(FJH)(FJD)(L8A)E3
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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