SVS7N65DTR MOSFET. Datasheet pdf. Equivalent
Type Designator: SVS7N65DTR
Marking Code: SVS7N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 30 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.66 Ohm
Package: TO252
SVS7N65DTR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVS7N65DTR Datasheet (PDF)
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