SVS80R900DE3TR MOSFET. Datasheet pdf. Equivalent
Type Designator: SVS80R900DE3TR
Marking Code: 80R90DE3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 21 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: TO252
SVS80R900DE3TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVS80R900DE3TR Datasheet (PDF)
svs80r900fe3 svs80r900de3tr svs80r900fjde3.pdf
SVS80R900F(D)(FJD)E3 6A800V MOS 2SVS80R900F(D)(FJD)E3 N MOSFET MOS 1 SVS80R900F(D)(FJD)E3 /
svs80r800fjhe3 svs80r800de3tr svs80r800fe3.pdf
SVS80R800FJH(D)(F)E3 7A, 800V MOS 2SVS80R800FJH(D)(F)E3 N MOSFET MOS 1 SVS80R800FJH(D)(F)E3 /
svs80r280fe3 svs80r280fjde3 svs80r280se3 svs80r280se3tr svs80r280p7e3.pdf
SVS80R280F(FJD)(S)(P7)E3 17A800V MOS 2SVS80R280F(FJD)(S)(P7)E3 N MOSFET1 MOS 3TO-247-3LSVS80R280F(FJD)(S)(P7)E3
svs80r430fe3 svs80r430fjhe3 svs80r430de3tr svs80r430fjde3 svs80r430l8ae3tr.pdf
SVS80R430F(FJH)(D)(FJD)(L8A)E3 12A800V MOS 2SVS80R430F(FJH)(D)(FJD)(L8A)E3 N 1MOSFET MOS 1 23TO-220FJH-3L SVS80R430F(F
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918