SVS80R900FJDE3 Datasheet. Specs and Replacement

Type Designator: SVS80R900FJDE3  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220F

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SVS80R900FJDE3 datasheet

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SVS80R900FJDE3

SVS80R430F(FJH)(D)(FJD)(L8A)E3 12A 800V MOS 2 SVS80R430F(FJH)(D)(FJD)(L8A)E3 N 1 MOSFET MOS 1 2 3 TO-220FJH-3L SVS80R430F(F... See More ⇒

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Detailed specifications: SVS80R430FJDE3, SVS80R430FJHE3, SVS80R430L8AE3TR, SVS80R800DE3TR, SVS80R800FE3, SVS80R800FJHE3, SVS80R900DE3TR, SVS80R900FE3, 2N60, SVSP11N60DD2TR, SVSP11N60FD2, SVSP11N60FJD2, SVSP11N60FJDD2, SVSP11N60KD2, SVSP11N60SD2, SVSP11N60SD2TR, SVSP11N60TD2

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