All MOSFET. SVS80R900FJDE3 Datasheet

 

SVS80R900FJDE3 Datasheet and Replacement


   Type Designator: SVS80R900FJDE3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F
 

 SVS80R900FJDE3 substitution

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SVS80R900FJDE3 Datasheet (PDF)

 ..1. Size:522K  silan
 svs80r900fe3 svs80r900de3tr svs80r900fjde3.pdf pdf_icon

SVS80R900FJDE3

SVS80R900F(D)(FJD)E3 6A800V MOS 2SVS80R900F(D)(FJD)E3 N MOSFET MOS 1 SVS80R900F(D)(FJD)E3 /

 8.1. Size:558K  silan
 svs80r800fjhe3 svs80r800de3tr svs80r800fe3.pdf pdf_icon

SVS80R900FJDE3

SVS80R800FJH(D)(F)E3 7A, 800V MOS 2SVS80R800FJH(D)(F)E3 N MOSFET MOS 1 SVS80R800FJH(D)(F)E3 /

 8.2. Size:505K  silan
 svs80r280fe3 svs80r280fjde3 svs80r280se3 svs80r280se3tr svs80r280p7e3.pdf pdf_icon

SVS80R900FJDE3

SVS80R280F(FJD)(S)(P7)E3 17A800V MOS 2SVS80R280F(FJD)(S)(P7)E3 N MOSFET1 MOS 3TO-247-3LSVS80R280F(FJD)(S)(P7)E3

 8.3. Size:673K  silan
 svs80r430fe3 svs80r430fjhe3 svs80r430de3tr svs80r430fjde3 svs80r430l8ae3tr.pdf pdf_icon

SVS80R900FJDE3

SVS80R430F(FJH)(D)(FJD)(L8A)E3 12A800V MOS 2SVS80R430F(FJH)(D)(FJD)(L8A)E3 N 1MOSFET MOS 1 23TO-220FJH-3L SVS80R430F(F

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Datasheet: SVS80R430FJDE3 , SVS80R430FJHE3 , SVS80R430L8AE3TR , SVS80R800DE3TR , SVS80R800FE3 , SVS80R800FJHE3 , SVS80R900DE3TR , SVS80R900FE3 , IRF830 , SVSP11N60DD2TR , SVSP11N60FD2 , SVSP11N60FJD2 , SVSP11N60FJDD2 , SVSP11N60KD2 , SVSP11N60SD2 , SVSP11N60SD2TR , SVSP11N60TD2 .

History: 2P802A | SWW20N65K | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20

Keywords - SVS80R900FJDE3 MOSFET datasheet

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