SVSP11N60DD2TR Datasheet. Specs and Replacement

Type Designator: SVSP11N60DD2TR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 89 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO252

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SVSP11N60DD2TR substitution

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SVSP11N60DD2TR datasheet

 ..1. Size:394K  silan
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SVSP11N60DD2TR

SVSP11N60FJ(D)D2 11A, 600V DP MOS 2 SVSP11N60FJ(D)D2 N MOSFET DP MOS 1 3 SVSP11N60FJ(D)D2 / ... See More ⇒

 ..2. Size:477K  silan
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SVSP11N60DD2TR

SVSP11N60D(F)(S)(FJD)(T)(K)D2 11A, 600V MOS 2 SVSP11N60D(F)(S)(FJD)(T)(K)D2 N 1 3 1 MOSFET MOS TO-263-2L 3 1 3 1. 2. 3.... See More ⇒

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SVSP11N60DD2TR

SVSP11N65D/F/S/FJD/K/TD2 11A, 650V MOS 2 1 SVSP11N65D/F/S/FJD/K/TD2 N MOSFET 3 1 TO-263-2L MOS 3 1. 2. 3. S... See More ⇒

 6.2. Size:320K  silan
 svsp11n65afjhd2.pdf pdf_icon

SVSP11N60DD2TR

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Detailed specifications: SVS80R430FJHE3, SVS80R430L8AE3TR, SVS80R800DE3TR, SVS80R800FE3, SVS80R800FJHE3, SVS80R900DE3TR, SVS80R900FE3, SVS80R900FJDE3, 8N60, SVSP11N60FD2, SVSP11N60FJD2, SVSP11N60FJDD2, SVSP11N60KD2, SVSP11N60SD2, SVSP11N60SD2TR, SVSP11N60TD2, SVSP11N65AFJHD2

Keywords - SVSP11N60DD2TR MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.