All MOSFET. SVSP11N60FJD2 Datasheet

 

SVSP11N60FJD2 Datasheet and Replacement


   Type Designator: SVSP11N60FJD2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220F
 

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SVSP11N60FJD2 Datasheet (PDF)

 ..1. Size:394K  silan
 svsp11n60fjd2 svsp11n60dd2tr.pdf pdf_icon

SVSP11N60FJD2

SVSP11N60FJ(D)D2 11A, 600V DP MOS 2SVSP11N60FJ(D)D2 N MOSFET DP MOS 1 3 SVSP11N60FJ(D)D2 /

 2.1. Size:477K  silan
 svsp11n60dd2tr svsp11n60fd2 svsp11n60sd2 svsp11n60sd2tr svsp11n60fjdd2 svsp11n60td2 svsp11n60kd2.pdf pdf_icon

SVSP11N60FJD2

SVSP11N60D(F)(S)(FJD)(T)(K)D2 11A, 600V MOS 2SVSP11N60D(F)(S)(FJD)(T)(K)D2 N 131MOSFET MOS TO-263-2L31 31. 2. 3.

 6.1. Size:480K  silan
 svsp11n65dd2tra svsp11n65fd2 svsp11n65sd2 svsp11n65sd2tr svsp11n65fjdd2 svsp11n65kd2 svsp11n65td2.pdf pdf_icon

SVSP11N60FJD2

SVSP11N65D/F/S/FJD/K/TD2 11A, 650V MOS 2 1SVSP11N65D/F/S/FJD/K/TD2 N MOSFET31TO-263-2L MOS 3 1. 2. 3.S

 6.2. Size:320K  silan
 svsp11n65afjhd2.pdf pdf_icon

SVSP11N60FJD2

SVSP11N65AFJHD2 11A650V MOS 2 SVSP11N65AFJHD2 N MOSFET 1 MOS 3 SVSP11N65AFJHD2 /

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Datasheet: SVS80R800DE3TR , SVS80R800FE3 , SVS80R800FJHE3 , SVS80R900DE3TR , SVS80R900FE3 , SVS80R900FJDE3 , SVSP11N60DD2TR , SVSP11N60FD2 , IRF520 , SVSP11N60FJDD2 , SVSP11N60KD2 , SVSP11N60SD2 , SVSP11N60SD2TR , SVSP11N60TD2 , SVSP11N65AFJHD2 , SVSP11N65DD2TRA , SVSP11N65FD2 .

History: NVMTS0D6N04C

Keywords - SVSP11N60FJD2 MOSFET datasheet

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