All MOSFET. SVSP11N65SD2TR Datasheet

 

SVSP11N65SD2TR Datasheet and Replacement


   Type Designator: SVSP11N65SD2TR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 92 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO263
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SVSP11N65SD2TR Datasheet (PDF)

 ..1. Size:480K  silan
 svsp11n65dd2tra svsp11n65fd2 svsp11n65sd2 svsp11n65sd2tr svsp11n65fjdd2 svsp11n65kd2 svsp11n65td2.pdf pdf_icon

SVSP11N65SD2TR

SVSP11N65D/F/S/FJD/K/TD2 11A, 650V MOS 2 1SVSP11N65D/F/S/FJD/K/TD2 N MOSFET31TO-263-2L MOS 3 1. 2. 3.S

 5.1. Size:320K  silan
 svsp11n65afjhd2.pdf pdf_icon

SVSP11N65SD2TR

SVSP11N65AFJHD2 11A650V MOS 2 SVSP11N65AFJHD2 N MOSFET 1 MOS 3 SVSP11N65AFJHD2 /

 5.2. Size:319K  silan
 svsp11n65fjhd2.pdf pdf_icon

SVSP11N65SD2TR

SVSP11N65FJHD2 11A, 650V MOS 2 SVSP11N65FJHD2 N MOSFET 1 MOS 3SVSP11N65FJHD2 /1.

 6.1. Size:394K  silan
 svsp11n60fjd2 svsp11n60dd2tr.pdf pdf_icon

SVSP11N65SD2TR

SVSP11N60FJ(D)D2 11A, 600V DP MOS 2SVSP11N60FJ(D)D2 N MOSFET DP MOS 1 3 SVSP11N60FJ(D)D2 /

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History: AP60T10GP | CS20N50ANH | DMNH10H028SCT | SPP17N80C3 | AP01L60AT | TPP70R950C | IRLS4030

Keywords - SVSP11N65SD2TR MOSFET datasheet

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