SVSP11N65TD2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SVSP11N65TD2
Marking Code: P11N65TD2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 92 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 37 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
Package: TO220
SVSP11N65TD2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVSP11N65TD2 Datasheet (PDF)
svsp11n65dd2tra svsp11n65fd2 svsp11n65sd2 svsp11n65sd2tr svsp11n65fjdd2 svsp11n65kd2 svsp11n65td2.pdf
SVSP11N65D/F/S/FJD/K/TD2 11A, 650V MOS 2 1SVSP11N65D/F/S/FJD/K/TD2 N MOSFET31TO-263-2L MOS 3 1. 2. 3.S
svsp11n65afjhd2.pdf
SVSP11N65AFJHD2 11A650V MOS 2 SVSP11N65AFJHD2 N MOSFET 1 MOS 3 SVSP11N65AFJHD2 /
svsp11n65fjhd2.pdf
SVSP11N65FJHD2 11A, 650V MOS 2 SVSP11N65FJHD2 N MOSFET 1 MOS 3SVSP11N65FJHD2 /1.
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SVSP11N60FJ(D)D2 11A, 600V DP MOS 2SVSP11N60FJ(D)D2 N MOSFET DP MOS 1 3 SVSP11N60FJ(D)D2 /
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SVSP11N60D(F)(S)(FJD)(T)(K)D2 11A, 600V MOS 2SVSP11N60D(F)(S)(FJD)(T)(K)D2 N 131MOSFET MOS TO-263-2L31 31. 2. 3.
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: KU2310Q | RCD075N19
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918