SVSP14N65FJHE2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SVSP14N65FJHE2
Marking Code: P14N65FJHE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 14 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 37 nS
Cossⓘ - Output Capacitance: 46 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
Package: TO220F
SVSP14N65FJHE2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
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