All MOSFET. SVSP14N65TD2 Datasheet

 

SVSP14N65TD2 Datasheet and Replacement


   Type Designator: SVSP14N65TD2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 139 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.31 Ohm
   Package: TO220
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SVSP14N65TD2 Datasheet (PDF)

 ..1. Size:376K  silan
 svsp14n65fjdd2 svsp14n65td2 svsp14n65kd2.pdf pdf_icon

SVSP14N65TD2

SVSP14N65FJD (T)KD2 14A, 650V MOS 2SVSP14N65FJD/T/KD2 N MOSFET 1 MOS 123 3TO-262-3LSVSP14N65FJD/T/KD2

 5.1. Size:318K  silan
 svsp14n65fjhe2.pdf pdf_icon

SVSP14N65TD2

SVSP14N65FJHE2 14A, 650V MOS 2SVSP14N65FJHE2 N MOSFET MOS 1 3SVSP14N65FJHE2 /

 5.2. Size:345K  silan
 svsp14n65afjhe2.pdf pdf_icon

SVSP14N65TD2

SVSP14N65AFJHE2 14A, 650V MOS 2SVSP14N65AFJHE2 N MOSFET MOS 1 3 SVSP14N65AFJHE2 /

 6.1. Size:364K  silan
 svsp14n60td2 svsp14n60fjdd2 svsp14n60fd2.pdf pdf_icon

SVSP14N65TD2

SVSP14N60F(FJD)(T)D2 14A, 600V MOS 2 SVSP14N60F(FJD)(T)D2 N MOSFET 1 MOS 31. 2. 3.SVSP14N60F(FJD)(T)D2

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History: TK2P60D | IRFBG20

Keywords - SVSP14N65TD2 MOSFET datasheet

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