SVSP20N60PND2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SVSP20N60PND2
Marking Code: P20N60PN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 39 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 67 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO3P
SVSP20N60PND2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVSP20N60PND2 Datasheet (PDF)
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Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: WM02P56M3
