SVSP20N60SD2 Datasheet and Replacement
Type Designator: SVSP20N60SD2
Marking Code: P20N60SD2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 39 nC
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 67 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO263
SVSP20N60SD2 substitution
SVSP20N60SD2 Datasheet (PDF)
svsp20n60fjdd2 svsp20n60kd2 svsp20n60td2 svsp20n60pnd2 svsp20n60sd2 svsp20n60sd2tr svsp20n60p7d2.pdf
SVSP20N60FJD(K)(T)(PN)(S)(P7)D2 20A600V MOS 2 123SVSP20N60FJD(K)(T)(PN)(S)(P7)D2 N 1TO-262-3LMOSFET MOS 3131. 2. 3.
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SVSP20NF60TD2 20A600V MOS 2SVSP20NF60TD2 N MOSFET MOS 1 3SVSP20NF60TD2 / 1.
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SVSP24N60FJD(T)D2 24A600V MOS 2SVSP24N60FJD(T)D2 N MOSFET 1 MOS 3. 1. 2. 3.SVSP24N60FJD(T)D2
svsp24nf60fjdd2.pdf
SVSP24NF60FJDD2 24A, 600V MOS 2SVSP24NF60FJDD2 N MOSFET MOS 1 3SVSP24NF60FJD2 /
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