All MOSFET. SVSP60R033P7HD4 Datasheet

 

SVSP60R033P7HD4 Datasheet and Replacement


   Type Designator: SVSP60R033P7HD4
   Marking Code: P60R033P7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 544 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 83 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 169 nC
   tr ⓘ - Rise Time: 74 nS
   Cossⓘ - Output Capacitance: 227 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: TO247
 

 SVSP60R033P7HD4 substitution

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SVSP60R033P7HD4 Datasheet (PDF)

 0.1. Size:473K  silan
 svsp60r033p7hd4.pdf pdf_icon

SVSP60R033P7HD4

SVSP60R033P7HD4 83A, 600V MOS 2SVSP60R033P7HD4 N MOSFET MOS 1 SVSP60R033P7HD4 /3

 6.1. Size:604K  silan
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SVSP60R033P7HD4

SVSP60R090P7(L)(FJD)HD4 38A, 600V MOS 2 TabSVSP60R090P7(L)(FJD)HD4 N MOSFET1 pin1 MOS 3 Pin2-8SVSP60R090P7(L)(FJD)HD4

 9.1. Size:509K  silan
 svsp65r050p7hd4.pdf pdf_icon

SVSP60R033P7HD4

SVSP65R050P7HD4 60A, 650V MOS 2SVSP65R050P7HD4 N MOSFET MOS 1 SVSP65R050P7HD4 /

 9.2. Size:571K  silan
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SVSP60R033P7HD4

SVSP65R110P7(T)(S)(FJD)(L)HD4 35A650V MOS Tab2SVSP65R110P7(T)(S)(FJD)(L)HD4 N 1 pin1MOSFET MOS 3 Pin2-8 Pin1. Tab. 1.

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History: PMBF4391

Keywords - SVSP60R033P7HD4 MOSFET datasheet

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