SVSP60R090FJDHD4 PDF and Equivalents Search

 

SVSP60R090FJDHD4 Specs and Replacement

Type Designator: SVSP60R090FJDHD4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO220F

SVSP60R090FJDHD4 substitution

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SVSP60R090FJDHD4 datasheet

 0.1. Size:604K  silan
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SVSP60R090FJDHD4

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SVSP60R090FJDHD4

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SVSP60R090FJDHD4

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SVSP60R090FJDHD4

SVSP65R110P7(T)(S)(FJD)(L)HD4 35A 650V MOS Tab 2 SVSP65R110P7(T)(S)(FJD)(L)HD4 N 1 pin1 MOSFET MOS 3 Pin2-8 Pin1. Tab. 1.... See More ⇒

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Detailed specifications: SVSP20N60SD2TR, SVSP20N60TD2, SVSP20NF60TD2, SVSP24N60FJDD2, SVSP24N60TD2, SVSP24NF60FJDD2, SVSP35NF65P7D3, SVSP60R033P7HD4, IRF3710, SVSP60R090LHD4TR, SVSP60R090P7HD4, SVSP65R041P7HD4, SVSP65R050P7HD4, SVSP65R080P7HD4, SVSP65R110FJDHD4, SVSP65R110LHD4TR, SVSP65R110P7HD4

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