SVSP65R041P7HD4 Specs and Replacement
Type Designator: SVSP65R041P7HD4
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 208 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
Package: TO247
SVSP65R041P7HD4 substitution
- MOSFET ⓘ Cross-Reference Search
SVSP65R041P7HD4 datasheet
svsp65r050p7hd4.pdf
SVSP65R050P7HD4 60A, 650V MOS 2 SVSP65R050P7HD4 N MOSFET MOS 1 SVSP65R050P7HD4 / ... See More ⇒
svsp65r080p7hd4.pdf
SVSP65R080P7HD4 43A, 650V MOS 2 SVSP65R080P7HD4 N MOSFET MOS 1 SVSP65R080P7HD4 / ... See More ⇒
Detailed specifications: SVSP24N60FJDD2, SVSP24N60TD2, SVSP24NF60FJDD2, SVSP35NF65P7D3, SVSP60R033P7HD4, SVSP60R090FJDHD4, SVSP60R090LHD4TR, SVSP60R090P7HD4, IRFB4115, SVSP65R050P7HD4, SVSP65R080P7HD4, SVSP65R110FJDHD4, SVSP65R110LHD4TR, SVSP65R110P7HD4, SVSP65R110SHD4, SVSP65R110SHD4TR, SVSP65R110THD4
Keywords - SVSP65R041P7HD4 MOSFET specs
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SVSP65R041P7HD4 substitution
SVSP65R041P7HD4 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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