SVSP65R110SHD4 MOSFET. Datasheet pdf. Equivalent
Type Designator: SVSP65R110SHD4
Marking Code: P65R110S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 83 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
Package: TO263
SVSP65R110SHD4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVSP65R110SHD4 Datasheet (PDF)
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