All MOSFET. SVSP65R110THD4 Datasheet

 

SVSP65R110THD4 Datasheet and Replacement


   Type Designator: SVSP65R110THD4
   Marking Code: P65R110T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 83 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO220
 

 SVSP65R110THD4 substitution

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SVSP65R110THD4 Datasheet (PDF)

 ..1. Size:571K  silan
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SVSP65R110THD4

SVSP65R110P7(T)(S)(FJD)(L)HD4 35A650V MOS Tab2SVSP65R110P7(T)(S)(FJD)(L)HD4 N 1 pin1MOSFET MOS 3 Pin2-8 Pin1. Tab. 1.

 7.1. Size:509K  silan
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SVSP65R110THD4

SVSP65R050P7HD4 60A, 650V MOS 2SVSP65R050P7HD4 N MOSFET MOS 1 SVSP65R050P7HD4 /

 7.2. Size:489K  silan
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SVSP65R110THD4

SVSP65R080P7HD4 43A, 650V MOS 2SVSP65R080P7HD4 N MOSFET MOS 1 SVSP65R080P7HD4 /

 7.3. Size:469K  silan
 svsp65r041p7hd4.pdf pdf_icon

SVSP65R110THD4

SVSP65R041P7HD4 70A650V MOS 2SVSP65R041P7HD4 N MOSFET MOS 1 SVSP65R041P7HD4 /

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: AP9420GM

Keywords - SVSP65R110THD4 MOSFET datasheet

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