SVSP80R180P7E3 Specs and Replacement
Type Designator: SVSP80R180P7E3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 272 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 103 nS
Cossⓘ - Output Capacitance: 94 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO247
SVSP80R180P7E3 substitution
- MOSFET ⓘ Cross-Reference Search
SVSP80R180P7E3 datasheet
svsp80r180se3 svsp80r180se3tr svsp80r180fjde3 svsp80r180p7e3.pdf
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Detailed specifications: SVSP65R110SHD4TR, SVSP65R110THD4, SVSP7N70DD2TR, SVSP7N70FD2, SVSP7N70FJDD2, SVSP7N70SD2, SVSP7N70SD2TR, SVSP80R180FJDE3, AO3401, SVSP80R180SE3, SVSP80R180SE3TR, SVT03100ND, SVT03100NL3, SVT03110PL3, SVT03200PSA, SVT032R5ND, SVT03380PSA
Keywords - SVSP80R180P7E3 MOSFET specs
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SVSP80R180P7E3 substitution
SVSP80R180P7E3 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: ME50N06T | ME50N06T-G
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