SVSP80R180SE3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SVSP80R180SE3
Marking Code: P80R180SE3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 103 nS
Cossⓘ - Output Capacitance: 94 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO263
SVSP80R180SE3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVSP80R180SE3 Datasheet (PDF)
..1. Size:550K silan
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SVSP80R180S(FJD)(P7)E3 24A, 800V MOS 2SVSP80R180S(FJD)(P7)E3 N MOSFET MOS 1 123 3SVSP80R180S(FJD)(P7)E3
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .