SVSP80R180SE3 Datasheet and Replacement
Type Designator: SVSP80R180SE3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 103 nS
Cossⓘ - Output Capacitance: 94 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO263
SVSP80R180SE3 substitution
SVSP80R180SE3 Datasheet (PDF)
svsp80r180se3 svsp80r180se3tr svsp80r180fjde3 svsp80r180p7e3.pdf
SVSP80R180S(FJD)(P7)E3 24A, 800V MOS 2SVSP80R180S(FJD)(P7)E3 N MOSFET MOS 1 123 3SVSP80R180S(FJD)(P7)E3
Datasheet: SVSP65R110THD4 , SVSP7N70DD2TR , SVSP7N70FD2 , SVSP7N70FJDD2 , SVSP7N70SD2 , SVSP7N70SD2TR , SVSP80R180FJDE3 , SVSP80R180P7E3 , SPP20N60C3 , SVSP80R180SE3TR , SVT03100ND , SVT03100NL3 , SVT03110PL3 , SVT03200PSA , SVT032R5ND , SVT03380PSA , SVT033R5NAT .
History: NVD3055L170 | LS3956 | AP09N20J-HF | SVSP80R180FJDE3
Keywords - SVSP80R180SE3 MOSFET datasheet
SVSP80R180SE3 cross reference
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History: NVD3055L170 | LS3956 | AP09N20J-HF | SVSP80R180FJDE3
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