SVSP80R180SE3TR Datasheet and Replacement
Type Designator: SVSP80R180SE3TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 245 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 103 nS
Cossⓘ - Output Capacitance: 94 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO263
SVSP80R180SE3TR substitution
SVSP80R180SE3TR Datasheet (PDF)
svsp80r180se3 svsp80r180se3tr svsp80r180fjde3 svsp80r180p7e3.pdf
SVSP80R180S(FJD)(P7)E3 24A, 800V MOS 2SVSP80R180S(FJD)(P7)E3 N MOSFET MOS 1 123 3SVSP80R180S(FJD)(P7)E3
Datasheet: SVSP7N70DD2TR , SVSP7N70FD2 , SVSP7N70FJDD2 , SVSP7N70SD2 , SVSP7N70SD2TR , SVSP80R180FJDE3 , SVSP80R180P7E3 , SVSP80R180SE3 , 8205A , SVT03100ND , SVT03100NL3 , SVT03110PL3 , SVT03200PSA , SVT032R5ND , SVT03380PSA , SVT033R5NAT , SVT033R5NT .
History: NTD5406N | 2SK3820 | PHD3N40E
Keywords - SVSP80R180SE3TR MOSFET datasheet
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History: NTD5406N | 2SK3820 | PHD3N40E
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