SVT03100ND Datasheet and Replacement
Type Designator: SVT03100ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 34 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
SVT03100ND substitution
SVT03100ND Datasheet (PDF)
svt03100nl3.pdf
SVT03100NL3 45A30V N SVT03100NL3 N MOS S D1 8LVMOS S 7 D2 DS 3 6
svt03110pl3.pdf
SVT03110PL3 -46A-30V P SVT03110PL3 P MOS S D18 LVMOS S D2 7 DS 3 6
svt037r0nl3.pdf
SVT037R0NL3 58A30V N SVT037R0NL3 N MOS S D1 8LVMOS S 7 D2 DS 3 6
Datasheet: SVSP7N70FD2 , SVSP7N70FJDD2 , SVSP7N70SD2 , SVSP7N70SD2TR , SVSP80R180FJDE3 , SVSP80R180P7E3 , SVSP80R180SE3 , SVSP80R180SE3TR , 2SK3568 , SVT03100NL3 , SVT03110PL3 , SVT03200PSA , SVT032R5ND , SVT03380PSA , SVT033R5NAT , SVT033R5NT , SVT034R0NL5 .
History: 2SK2012 | FDB8453LZ | AP1333GU
Keywords - SVT03100ND MOSFET datasheet
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History: 2SK2012 | FDB8453LZ | AP1333GU
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