All MOSFET. SVT03100ND Datasheet

 

SVT03100ND Datasheet and Replacement


   Type Designator: SVT03100ND
   Marking Code: 03100ND
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 26 nC
   tr ⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO252
 

 SVT03100ND substitution

   - MOSFET ⓘ Cross-Reference Search

 

SVT03100ND Datasheet (PDF)

 ..1. Size:375K  silan
 svt03100nd.pdf pdf_icon

SVT03100ND

SVT03100ND 60A30V N 2SVT03100ND N MOS LVMOS 1 3

 5.1. Size:339K  silan
 svt03100nl3.pdf pdf_icon

SVT03100ND

SVT03100NL3 45A30V N SVT03100NL3 N MOS S D1 8LVMOS S 7 D2 DS 3 6

 8.1. Size:400K  silan
 svt03110pl3.pdf pdf_icon

SVT03100ND

SVT03110PL3 -46A-30V P SVT03110PL3 P MOS S D18 LVMOS S D2 7 DS 3 6

 9.1. Size:436K  silan
 svt037r0nl3.pdf pdf_icon

SVT03100ND

SVT037R0NL3 58A30V N SVT037R0NL3 N MOS S D1 8LVMOS S 7 D2 DS 3 6

SHOW MORE

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFP460 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: STB9NK60ZDT4 | KP103J

Keywords - SVT03100ND MOSFET datasheet

 SVT03100ND cross reference
 SVT03100ND equivalent finder
 SVT03100ND lookup
 SVT03100ND substitution
 SVT03100ND replacement

 

 
Back to Top

 


 
.