All MOSFET. SVT042R5NL5TR Datasheet

 

SVT042R5NL5TR Datasheet and Replacement


   Type Designator: SVT042R5NL5TR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 240 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 89 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: PDFN8-5X6
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SVT042R5NL5TR Datasheet (PDF)

 ..1. Size:353K  silan
 svt042r5nl5tr svt042r5nt.pdf pdf_icon

SVT042R5NL5TR

SVT042R5NL5(T) 240A40V N 2S D1 8SVT042R5NL5(T) N MOS S 7 D2 LVMOS 1DS 3 6 G 4 5 D

 8.1. Size:382K  silan
 svt04230nr.pdf pdf_icon

SVT042R5NL5TR

SVT04230NR 7A40V N 2SVT04230NR N MOS LVMOS 1

 9.1. Size:352K  silan
 svt043r0nt svt043r0nl5tr.pdf pdf_icon

SVT042R5NL5TR

SVT043R0NT/L5 180A40V N 2S D1 8SVT043R0NT/L5 N MOS S 7 D2 LVMOS 1DS 3 6 G 4 5 D

 9.2. Size:485K  silan
 svt044r5nt svt044r5nd svt044r5nl5.pdf pdf_icon

SVT042R5NL5TR

SVT044R5NT/D/L5_Datasheet 178A, 40V N-CHANNEL MOSFET DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Mana

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History: TSF20N65MR | VS3620GPMC | AM5350N

Keywords - SVT042R5NL5TR MOSFET datasheet

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