SVT042R5NL5TR MOSFET. Datasheet pdf. Equivalent

   Type Designator: SVT042R5NL5TR
   Marking Code: 042R5NL5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.8 V
   |Id|ⓘ - Maximum Drain Current: 240 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 108 nC
   trⓘ - Rise Time: 89 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: PDFN8-5X6

SVT042R5NL5TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SVT042R5NL5TR Datasheet (PDF)

..1. Size:353K silan
svt042r5nl5tr svt042r5nt.pdf

SVT042R5NL5(T) 240A40V N 2S D1 8SVT042R5NL5(T) N MOS S 7 D2 LVMOS 1DS 3 6 G 4 5 D

8.1. Size:382K silan
svt04230nr.pdf

SVT04230NR 7A40V N 2SVT04230NR N MOS LVMOS 1

9.1. Size:352K silan
svt043r0nt svt043r0nl5tr.pdf

SVT043R0NT/L5 180A40V N 2S D1 8SVT043R0NT/L5 N MOS S 7 D2 LVMOS 1DS 3 6 G 4 5 D

9.2. Size:485K silan
svt044r5nt svt044r5nd svt044r5nl5.pdf

SVT044R5NT/D/L5_Datasheet 178A, 40V N-CHANNEL MOSFET DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Mana

9.3. Size:459K silan
svt044r5nt svt044r5ndtr svt044r5nl5tr.pdf