SVT043R0NL5TR Datasheet and Replacement
Type Designator: SVT043R0NL5TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 180 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 545 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: PDFN8-5X6
SVT043R0NL5TR substitution
SVT043R0NL5TR Datasheet (PDF)
svt043r0nt svt043r0nl5tr.pdf
SVT043R0NT/L5 180A40V N 2S D1 8SVT043R0NT/L5 N MOS S 7 D2 LVMOS 1DS 3 6 G 4 5 D
svt042r5nl5tr svt042r5nt.pdf
SVT042R5NL5(T) 240A40V N 2S D1 8SVT042R5NL5(T) N MOS S 7 D2 LVMOS 1DS 3 6 G 4 5 D
svt044r5nt svt044r5nd svt044r5nl5.pdf
SVT044R5NT/D/L5_Datasheet 178A, 40V N-CHANNEL MOSFET DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Mana
Datasheet: SVT035R5NMJ , SVT035R5NSA , SVT035R5NT , SVT037R0NL3 , SVT041R7NT , SVT04230NR , SVT042R5NL5TR , SVT042R5NT , STF13NM60N , SVT043R0NT , SVT044R5NDTR , SVT044R5NL5TR , SVT068R5NDTR , SVT068R5NL5TR , SVT068R5NSTR , SVT068R5NT , SVT078R0NS .
History: STD3LN62K3 | CPH5852
Keywords - SVT043R0NL5TR MOSFET datasheet
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History: STD3LN62K3 | CPH5852
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