SVT044R5NDTR Specs and Replacement
Type Designator: SVT044R5NDTR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 112 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 178 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 542 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
SVT044R5NDTR substitution
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SVT044R5NDTR datasheet
svt044r5nt svt044r5ndtr svt044r5nl5tr.pdf
SVT044R5NT/D/L5 178A 40V N 2 S D 1 8 SVT044R5NT/D/L5 N MOS S 2 7 D 1 D S 3 6 LVMOS G 4 5 D 3 ... See More ⇒
svt044r5nt svt044r5nd svt044r5nl5.pdf
SVT044R5NT/D/L5_Datasheet 178A, 40V N-CHANNEL MOSFET DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Mana... See More ⇒
svt043r0nt svt043r0nl5tr.pdf
SVT043R0NT/L5 180A 40V N 2 S D 1 8 SVT043R0NT/L5 N MOS S 7 D 2 LVMOS 1 D S 3 6 G 4 5 D ... See More ⇒
Detailed specifications: SVT035R5NT, SVT037R0NL3, SVT041R7NT, SVT04230NR, SVT042R5NL5TR, SVT042R5NT, SVT043R0NL5TR, SVT043R0NT, 2SK3568, SVT044R5NL5TR, SVT068R5NDTR, SVT068R5NL5TR, SVT068R5NSTR, SVT068R5NT, SVT078R0NS, SVT078R0NT, SVT085R5NKL
Keywords - SVT044R5NDTR MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: 2SK1821 | IPAW60R600P7S
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