SVT044R5NDTR Datasheet and Replacement
Type Designator: SVT044R5NDTR
Marking Code: 044R5ND
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 112 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
|Id| ⓘ - Maximum Drain Current: 178 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 111 nC
tr ⓘ - Rise Time: 130 nS
Cossⓘ - Output Capacitance: 542 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO252
SVT044R5NDTR substitution
SVT044R5NDTR Datasheet (PDF)
svt044r5nt svt044r5ndtr svt044r5nl5tr.pdf
SVT044R5NT/D/L5 178A40V N 2 S D1 8SVT044R5NT/D/L5 N MOS S 2 7 D1DS 3 6 LVMOS G 4 5 D 3
svt044r5nt svt044r5nd svt044r5nl5.pdf
SVT044R5NT/D/L5_Datasheet 178A, 40V N-CHANNEL MOSFET DESCRIPTION SVT044R5NT/D/L5 an N-channel enhancement mode power MOS field effect transistor which is produced using SILAN LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, Power Mana
svt043r0nt svt043r0nl5tr.pdf
SVT043R0NT/L5 180A40V N 2S D1 8SVT043R0NT/L5 N MOS S 7 D2 LVMOS 1DS 3 6 G 4 5 D
svt042r5nl5tr svt042r5nt.pdf
SVT042R5NL5(T) 240A40V N 2S D1 8SVT042R5NL5(T) N MOS S 7 D2 LVMOS 1DS 3 6 G 4 5 D
Datasheet: SVT035R5NT , SVT037R0NL3 , SVT041R7NT , SVT04230NR , SVT042R5NL5TR , SVT042R5NT , SVT043R0NL5TR , SVT043R0NT , 5N65 , SVT044R5NL5TR , SVT068R5NDTR , SVT068R5NL5TR , SVT068R5NSTR , SVT068R5NT , SVT078R0NS , SVT078R0NT , SVT085R5NKL .
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