SVT068R5NSTR MOSFET. Datasheet pdf. Equivalent
Type Designator: SVT068R5NSTR
Marking Code: 068R5NS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 89 nC
trⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 235 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO263
SVT068R5NSTR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SVT068R5NSTR Datasheet (PDF)
svt068r5nt svt068r5ndtr svt068r5nstr svt068r5nl5tr.pdf
SVT068R5NT/D/S/L5 80A60V N 2S D1 8SVT068R5NT/D/S/L5 N MOS S 2 7 D LVMOS D1 S 3 6G 4 5 D
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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