SVT068R5NSTR Specs and Replacement
Type Designator: SVT068R5NSTR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 158 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 44 nS
Cossⓘ - Output Capacitance: 235 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO263
SVT068R5NSTR substitution
- MOSFET ⓘ Cross-Reference Search
SVT068R5NSTR datasheet
Detailed specifications: SVT042R5NL5TR, SVT042R5NT, SVT043R0NL5TR, SVT043R0NT, SVT044R5NDTR, SVT044R5NL5TR, SVT068R5NDTR, SVT068R5NL5TR, SI2302, SVT068R5NT, SVT078R0NS, SVT078R0NT, SVT085R5NKL, SVT085R5NL5TR, SVT085R5NS, SVT085R5NT, SVT10111ND
Keywords - SVT068R5NSTR MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: WSR140N08
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