SVT10111ND Specs and Replacement
Type Designator: SVT10111ND
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28.3 nS
Cossⓘ - Output Capacitance: 50.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: TO252
SVT10111ND substitution
- MOSFET ⓘ Cross-Reference Search
SVT10111ND datasheet
Detailed specifications: SVT068R5NSTR, SVT068R5NT, SVT078R0NS, SVT078R0NT, SVT085R5NKL, SVT085R5NL5TR, SVT085R5NS, SVT085R5NT, 2N60, SVT10500PD, SVT1104SA, SVT20240NP7, SVT20240NS, SVT20240NT, SVT25600NF, SVT25600NT, SVT3025D4
Keywords - SVT10111ND MOSFET specs
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