EMB07N03HR Datasheet and Replacement
Type Designator: EMB07N03HR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 163 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DFN5X6
EMB07N03HR substitution
EMB07N03HR Datasheet (PDF)
emb07n03hr.pdf
EMB07N03HRNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)7mID50AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20
Datasheet: SVT20240NS , SVT20240NT , SVT25600NF , SVT25600NT , SVT3025D4 , SVT4607SA , SVTP035R5NL3 , SVTP209R7NP7 , IRLB3034 , EMF90P02A , FQP12N65C , FQPF12N65C , HY3408AP , HY3408AM , HY3408AB , HY3408APS , HY3408APM .
History: TMD4N65Z | AP2R803GS-HF | AP3801GM-HF | 2SK3504 | SK840320 | SVTP209R7NP7
Keywords - EMB07N03HR MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: TMD4N65Z | AP2R803GS-HF | AP3801GM-HF | 2SK3504 | SK840320 | SVTP209R7NP7
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