All MOSFET. EMB07N03HR Datasheet

 

EMB07N03HR Datasheet and Replacement


   Type Designator: EMB07N03HR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN5X6
 

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EMB07N03HR Datasheet (PDF)

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EMB07N03HR

EMB07N03HRNChannelLogicLevelEnhancementModeFieldEffectTransistorProductSummary:DBVDSS30VRDSON(MAX.)7mID50AGSUIS,Rg100%TestedPbFreeLeadPlating&HalogenFreeABSOLUTEMAXIMUMRATINGS(TA=25CUnlessOtherwiseNoted)PARAMETERS/TESTCONDITIONSSYMBOLLIMITSUNITGateSourceVoltageVGS20

Datasheet: SVT20240NS , SVT20240NT , SVT25600NF , SVT25600NT , SVT3025D4 , SVT4607SA , SVTP035R5NL3 , SVTP209R7NP7 , 60N06 , EMF90P02A , FQP12N65C , FQPF12N65C , HY3408AP , HY3408AM , HY3408AB , HY3408APS , HY3408APM .

History: IPP120N04S3-02

Keywords - EMB07N03HR MOSFET datasheet

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