EMB07N03HR Specs and Replacement
Type Designator: EMB07N03HR
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 163 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DFN5X6
EMB07N03HR substitution
- MOSFET ⓘ Cross-Reference Search
EMB07N03HR datasheet
emb07n03hr.pdf
EMB07N03HR N Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary D BVDSS 30V RDSON (MAX.) 7m ID 50A G S UIS, Rg 100% Tested Pb Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Gate Source Voltage VGS 20... See More ⇒
Detailed specifications: SVT20240NS, SVT20240NT, SVT25600NF, SVT25600NT, SVT3025D4, SVT4607SA, SVTP035R5NL3, SVTP209R7NP7, IRLB3034, EMF90P02A, FQP12N65C, FQPF12N65C, HY3408AP, HY3408AM, HY3408AB, HY3408APS, HY3408APM
Keywords - EMB07N03HR MOSFET specs
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History: CPH6354 | LSB65R180HT
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