WM01P60M PDF and Equivalents Search

 

WM01P60M Specs and Replacement

Type Designator: WM01P60M

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 445 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOT23

WM01P60M substitution

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WM01P60M datasheet

 ..1. Size:402K  way-on
 wm01p60m.pdf pdf_icon

WM01P60M

WM01P60M P-Channel MOSFET Features V = -12 V, I = -6A DS D R ... See More ⇒

 9.1. Size:494K  way-on
 wm01p41m.pdf pdf_icon

WM01P60M

Document W0803040, Rev D WM01P41M M P-Channel MOSFET Features V = -12V, I = -4.1A DS D R ... See More ⇒

Detailed specifications: HY3408APM, HY5012W, HY5012A, PK5E6BA, PTP03N04N, RMN3N5R0DN, RU75N08R, WM01P41M, IRF740, WM02DH08D, WM02DH08M3, WM02DH08T, WM02DH50M3, WM02DN080C, WM02DN085C, WM02DN08D, WM02DN08T

Keywords - WM01P60M MOSFET specs

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