WM01P60M Datasheet and Replacement
Type Designator: WM01P60M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 445 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT23
WM01P60M substitution
WM01P60M Datasheet (PDF)
wm01p41m.pdf
Document:W0803040, Rev: D WM01P41M M P-Channel MOSFET Features V = -12V, I = -4.1A DS DR
Datasheet: HY3408APM , HY5012W , HY5012A , PK5E6BA , PTP03N04N , RMN3N5R0DN , RU75N08R , WM01P41M , IRF740 , WM02DH08D , WM02DH08M3 , WM02DH08T , WM02DH50M3 , WM02DN080C , WM02DN085C , WM02DN08D , WM02DN08T .
History: IXTZ27N40MA | FJ4B0111 | SM7501NSFH | TPC8035-H | CEU50N06 | NCE01P30I | CR4N65FA9K
Keywords - WM01P60M MOSFET datasheet
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History: IXTZ27N40MA | FJ4B0111 | SM7501NSFH | TPC8035-H | CEU50N06 | NCE01P30I | CR4N65FA9K
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