WM02DH50M3 PDF and Equivalents Search

 

WM02DH50M3 Specs and Replacement

Type Designator: WM02DH50M3

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.6 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: SOT23-6L

WM02DH50M3 substitution

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WM02DH50M3 datasheet

 ..1. Size:905K  way-on
 wm02dh50m3.pdf pdf_icon

WM02DH50M3

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 8.1. Size:600K  way-on
 wm02dh08t.pdf pdf_icon

WM02DH50M3

Document W0803114, Rev C WM02DH08T T N+P Dual Channel MOSFET Features N - Channel 6 V = 20V, I = 0.75A DS D R ... See More ⇒

 8.2. Size:609K  way-on
 wm02dh08m3.pdf pdf_icon

WM02DH50M3

WM02DH08M3 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel V = 20V, I = 1.4A DS D R ... See More ⇒

 8.3. Size:467K  way-on
 wm02dh08d.pdf pdf_icon

WM02DH50M3

WM02DH08D N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N - Channel V = 20V, I = 0.75A DS D R ... See More ⇒

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Detailed specifications: PTP03N04N, RMN3N5R0DN, RU75N08R, WM01P41M, WM01P60M, WM02DH08D, WM02DH08M3, WM02DH08T, IRF540, WM02DN080C, WM02DN085C, WM02DN08D, WM02DN08T, WM02DN095C, WM02DN110C, WM02DN48A, WM02DN50M3

Keywords - WM02DH50M3 MOSFET specs

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