All MOSFET. WM02DH50M3 Datasheet

 

WM02DH50M3 Datasheet and Replacement


   Type Designator: WM02DH50M3
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.6 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: SOT23-6L
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WM02DH50M3 Datasheet (PDF)

 ..1. Size:905K  way-on
 wm02dh50m3.pdf pdf_icon

WM02DH50M3

WM02DH50M31 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 5A DS DR

 8.1. Size:600K  way-on
 wm02dh08t.pdf pdf_icon

WM02DH50M3

Document: W0803114, Rev: C WM02DH08T T N+P Dual Channel MOSFET Features N - Channel 6V = 20V, I = 0.75A DS DR

 8.2. Size:609K  way-on
 wm02dh08m3.pdf pdf_icon

WM02DH50M3

WM02DH08M3 N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N-Channel: V = 20V, I = 1.4A DS DR

 8.3. Size:467K  way-on
 wm02dh08d.pdf pdf_icon

WM02DH50M3

WM02DH08D N+P Dual Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs N - Channel V = 20V, I = 0.75A DS DR

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History: 20N03L-TO252 | 2N6762JTXV

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