All MOSFET. WM02DN080C Datasheet

 

WM02DN080C Datasheet and Replacement


   Type Designator: WM02DN080C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
   Package: DFN2030-6L
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WM02DN080C Datasheet (PDF)

 ..1. Size:384K  way-on
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WM02DN080C

WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit

 6.1. Size:459K  way-on
 wm02dn08t.pdf pdf_icon

WM02DN080C

Document: W0803109, Rev: C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS DR

 6.2. Size:336K  way-on
 wm02dn085c.pdf pdf_icon

WM02DN080C

Document: W0803219, Rev: D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V

 6.3. Size:595K  way-on
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WM02DN080C

WM02DN08D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

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