WM02DN080C MOSFET Datasheet: N-Ch, 20V, 8A. Full specification with pinout and replacement list

WM02DN080C Specs and Replacement

Type Designator: WM02DN080C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 38 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm

Package: DFN2030-6L

WM02DN080C substitution

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WM02DN080C datasheet

..1. Size:384K way-on
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WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit... See More ⇒

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Document W0803109, Rev C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS D R ... See More ⇒

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Document W0803219, Rev D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m ) (BR)DSS D DS(on) WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V... See More ⇒

6.3. Size:595K way-on
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