All MOSFET. WM02DN095C Datasheet

 

WM02DN095C MOSFET. Datasheet pdf. Equivalent


   Type Designator: WM02DN095C
   Marking Code: C095N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 9.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 39.5 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: DFN2030-6L

 WM02DN095C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WM02DN095C Datasheet (PDF)

 ..1. Size:336K  way-on
 wm02dn095c.pdf

WM02DN095C WM02DN095C

Document: W0803218, Rev: D WM02DN095C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN095C uses advanced power trench 7.4 @VGS=4.5V technology that has been especially tailored to 7.8 @VGS=4.0V minimize the on-state resistance This device is 20 9.5 8.0 @VGS=3.7V suitable for un-directional or bidirectional load 8.8 @V

 7.1. Size:459K  way-on
 wm02dn08t.pdf

WM02DN095C WM02DN095C

Document: W0803109, Rev: C WM02DN08T T Dual N-Channel MOSFET Features V = 20 V, I = 0.75 A DS DR

 7.2. Size:336K  way-on
 wm02dn085c.pdf

WM02DN095C WM02DN095C

Document: W0803219, Rev: D WM02DN085C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN085C uses advanced power trench 8.2 @VGS=4.5V technology that has been especially tailored to 8.5 @VGS=4.0V minimize the on-state resistance This device is 20 8.5 8.8 @VGS=3.7V suitable for un-directional or bidirectional load 9.5 @V

 7.3. Size:595K  way-on
 wm02dn08d.pdf

WM02DN095C WM02DN095C

WM02DN08D Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 7.4. Size:384K  way-on
 wm02dn080c.pdf

WM02DN095C WM02DN095C

WM02DN080C Dual N-Channel Enhancement Mode MOSFET Description V (V) I (A) R TYP (m) (BR)DSS D DS(on)WM02DN080C-YW uses advanced power trench 13.0 @VGS=4.5V technology that has been especially tailored to 13.5 @VGS=4.0V minimize the on-state resistance This device is 20 8 14.0 @VGS=3.7V suitable for un-directional or bidirectional load 15.0 @VGS=3.1V switch, facilit

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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