All MOSFET. WM02N08F Datasheet

 

WM02N08F MOSFET. Datasheet pdf. Equivalent


   Type Designator: WM02N08F
   Marking Code: 02K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1 nC
   trⓘ - Rise Time: 2.1 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: DFN1006-3L

 WM02N08F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WM02N08F Datasheet (PDF)

 ..1. Size:439K  way-on
 wm02n08f.pdf

WM02N08F WM02N08F

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

 0.1. Size:350K  way-on
 wm02n08fb.pdf

WM02N08F WM02N08F

WM02N08FB N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

 7.1. Size:387K  way-on
 wm02n08l.pdf

WM02N08F WM02N08F

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 7.2. Size:450K  way-on
 wm02n08h.pdf

WM02N08F WM02N08F

WM02N08H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 7.3. Size:408K  way-on
 wm02n08g.pdf

WM02N08F WM02N08F

WM02N08G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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