WM02N08F Datasheet and Replacement
Type Designator: WM02N08F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.1 nS
Cossⓘ - Output Capacitance: 11 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: DFN1006-3
WM02N08F substitution
WM02N08F Datasheet (PDF)
wm02n08f.pdf

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR
wm02n08fb.pdf

WM02N08FB N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR
wm02n08l.pdf

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
wm02n08h.pdf

WM02N08H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
Datasheet: WM02DN110C , WM02DN48A , WM02DN50M3 , WM02DN560Q , WM02DN60M3 , WM02DN70A , WM02DN70M3 , WM02DP06D , P55NF06 , WM02N08FB , WM02N08G , WM02N08H , WM02N08L , WM02N20F , WM02N20G , WM02N25M , WM02N28M .
History: LSGG06R034W3
Keywords - WM02N08F MOSFET datasheet
WM02N08F cross reference
WM02N08F equivalent finder
WM02N08F lookup
WM02N08F substitution
WM02N08F replacement
History: LSGG06R034W3



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