All MOSFET. WM02N08G Datasheet

 

WM02N08G MOSFET. Datasheet pdf. Equivalent


   Type Designator: WM02N08G
   Marking Code: 02K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 0.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT323

 WM02N08G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WM02N08G Datasheet (PDF)

 ..1. Size:408K  way-on
wm02n08g.pdf

WM02N08G
WM02N08G

WM02N08G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 7.1. Size:387K  way-on
wm02n08l.pdf

WM02N08G
WM02N08G

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 7.2. Size:439K  way-on
wm02n08f.pdf

WM02N08G
WM02N08G

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

 7.3. Size:450K  way-on
wm02n08h.pdf

WM02N08G
WM02N08G

WM02N08H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 7.4. Size:350K  way-on
wm02n08fb.pdf

WM02N08G
WM02N08G

WM02N08FB N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
Back to Top