WM02N08G PDF and Equivalents Search

 

WM02N08G Specs and Replacement

Type Designator: WM02N08G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 0.75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: SOT323

WM02N08G substitution

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WM02N08G datasheet

 ..1. Size:408K  way-on
wm02n08g.pdf pdf_icon

WM02N08G

WM02N08G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS D R ... See More ⇒

 7.1. Size:387K  way-on
wm02n08l.pdf pdf_icon

WM02N08G

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS D R ... See More ⇒

 7.2. Size:439K  way-on
wm02n08f.pdf pdf_icon

WM02N08G

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS D D R ... See More ⇒

 7.3. Size:450K  way-on
wm02n08h.pdf pdf_icon

WM02N08G

WM02N08H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS D R ... See More ⇒

Detailed specifications: WM02DN50M3, WM02DN560Q, WM02DN60M3, WM02DN70A, WM02DN70M3, WM02DP06D, WM02N08F, WM02N08FB, 2N7000, WM02N08H, WM02N08L, WM02N20F, WM02N20G, WM02N25M, WM02N28M, WM02N31M, WM02N45M

Keywords - WM02N08G MOSFET specs

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