All MOSFET. WM02N08G Datasheet

 

WM02N08G Datasheet and Replacement


   Type Designator: WM02N08G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 0.75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: SOT323
 

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WM02N08G Datasheet (PDF)

 ..1. Size:408K  way-on
 wm02n08g.pdf pdf_icon

WM02N08G

WM02N08G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 7.1. Size:387K  way-on
 wm02n08l.pdf pdf_icon

WM02N08G

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

 7.2. Size:439K  way-on
 wm02n08f.pdf pdf_icon

WM02N08G

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR

 7.3. Size:450K  way-on
 wm02n08h.pdf pdf_icon

WM02N08G

WM02N08H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR

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Datasheet: WM02DN50M3 , WM02DN560Q , WM02DN60M3 , WM02DN70A , WM02DN70M3 , WM02DP06D , WM02N08F , WM02N08FB , IRFP250N , WM02N08H , WM02N08L , WM02N20F , WM02N20G , WM02N25M , WM02N28M , WM02N31M , WM02N45M .

History: RU30D10H | SL6800C | N0434N | SWT38N65K | TPCM8006 | TDM3415 | SHD219405

Keywords - WM02N08G MOSFET datasheet

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