WM02N08L Datasheet and Replacement
Type Designator: WM02N08L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 10 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: SOT523
WM02N08L substitution
WM02N08L Datasheet (PDF)
wm02n08l.pdf

WM02N08L N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
wm02n08f.pdf

WM02N08F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 20V, I = 0.75A DS DDR
wm02n08h.pdf

WM02N08H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
wm02n08g.pdf

WM02N08G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 0.75A DS DR
Datasheet: WM02DN60M3 , WM02DN70A , WM02DN70M3 , WM02DP06D , WM02N08F , WM02N08FB , WM02N08G , WM02N08H , 2SK3878 , WM02N20F , WM02N20G , WM02N25M , WM02N28M , WM02N31M , WM02N45M , WM02N50M , WM02N70ME .
History: TMPF8N60AZ
Keywords - WM02N08L MOSFET datasheet
WM02N08L cross reference
WM02N08L equivalent finder
WM02N08L lookup
WM02N08L substitution
WM02N08L replacement
History: TMPF8N60AZ



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