WM02N28M Specs and Replacement
Type Designator: WM02N28M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.8 nS
Cossⓘ - Output Capacitance: 37 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23
WM02N28M substitution
- MOSFET ⓘ Cross-Reference Search
WM02N28M datasheet
wm02n28m.pdf
Document W0803348, Rev B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS D R ... See More ⇒
wm02n20g.pdf
WM02N20G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS D R ... See More ⇒
wm02n20f.pdf
WM02N20F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS D G R ... See More ⇒
wm02n25m.pdf
WM02N25M N-Channel MOSFET Features V = 20V, I = 2.5A DS D R ... See More ⇒
Detailed specifications: WM02N08F, WM02N08FB, WM02N08G, WM02N08H, WM02N08L, WM02N20F, WM02N20G, WM02N25M, IRF9540, WM02N31M, WM02N45M, WM02N50M, WM02N70ME, WM02N75M2, WM02P06F, WM02P06G, WM02P06H
Keywords - WM02N28M MOSFET specs
WM02N28M cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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