WM02N28M Datasheet and Replacement
Type Designator: WM02N28M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.8 nS
Cossⓘ - Output Capacitance: 37 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: SOT23
WM02N28M substitution
WM02N28M Datasheet (PDF)
wm02n28m.pdf

Document: W0803348, Rev: B WM02N28M M N-Channel MOSFET Features V = 20V, I = 2.8A DS DR
wm02n20g.pdf

WM02N20G N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DR
wm02n20f.pdf

WM02N20F N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 20V, I = 2A DS DGR
Datasheet: WM02N08F , WM02N08FB , WM02N08G , WM02N08H , WM02N08L , WM02N20F , WM02N20G , WM02N25M , K3569 , WM02N31M , WM02N45M , WM02N50M , WM02N70ME , WM02N75M2 , WM02P06F , WM02P06G , WM02P06H .
History: PSMN6R9-100YSF
Keywords - WM02N28M MOSFET datasheet
WM02N28M cross reference
WM02N28M equivalent finder
WM02N28M lookup
WM02N28M substitution
WM02N28M replacement
History: PSMN6R9-100YSF



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