WM02P06L Datasheet and Replacement
Type Designator: WM02P06L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.66 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 15 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
Package: SOT523
WM02P06L substitution
WM02P06L Datasheet (PDF)
wm02p06l.pdf

Document: W0803106, Rev: B WM02P06L 1 P-Channel MOSFET Features V = -20 V, I = -0.66 A DS DR
wm02p06f.pdf

WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR
wm02p06h.pdf

WM02P06H P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DR
wm02p06g.pdf

WM02P06G P-Channel MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -0.66 A DS DR
Datasheet: WM02N31M , WM02N45M , WM02N50M , WM02N70ME , WM02N75M2 , WM02P06F , WM02P06G , WM02P06H , 12N60 , WM02P160R , WM02P18F , WM02P20G , WM02P23M , WM02P26M , WM02P30ME , WM02P40M3 , WM02P40ME .
History: SWF540 | LSGC10R080W3 | STS2305 | LSG65R950HT | MC08N005S | SVS80R900FE3 | KP746A1
Keywords - WM02P06L MOSFET datasheet
WM02P06L cross reference
WM02P06L equivalent finder
WM02P06L lookup
WM02P06L substitution
WM02P06L replacement
History: SWF540 | LSGC10R080W3 | STS2305 | LSG65R950HT | MC08N005S | SVS80R900FE3 | KP746A1



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