All MOSFET. WM02P06L Datasheet

 

WM02P06L Datasheet and Replacement


   Type Designator: WM02P06L
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 0.66 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 5.7 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: SOT523
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WM02P06L Datasheet (PDF)

 ..1. Size:2423K  way-on
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WM02P06L

Document: W0803106, Rev: B WM02P06L 1 P-Channel MOSFET Features V = -20 V, I = -0.66 A DS DR

 7.1. Size:364K  way-on
 wm02p06f.pdf pdf_icon

WM02P06L

WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR

 7.2. Size:424K  way-on
 wm02p06h.pdf pdf_icon

WM02P06L

WM02P06H P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DR

 7.3. Size:553K  way-on
 wm02p06g.pdf pdf_icon

WM02P06L

WM02P06G P-Channel MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -0.66 A DS DR

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History: BSZ035N03LSG | SVF9N90F

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