WM02P160R Datasheet and Replacement
Type Designator: WM02P160R
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 275 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: DFN2020-6L
- MOSFET Cross-Reference Search
WM02P160R Datasheet (PDF)
wm02p160r.pdf

WM02P160R 20V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM02P160R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -20V, I = -16A DS DR
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WM02P18F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs V = -20V, I = -1.8A DDS DR
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WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
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WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BSC094N03SG | IRFZ48RS | 2SJ595 | 2SJ585LS | WSD30L30DN | CSD87353Q5D | IPI47N10S-33
Keywords - WM02P160R MOSFET datasheet
WM02P160R cross reference
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History: BSC094N03SG | IRFZ48RS | 2SJ595 | 2SJ585LS | WSD30L30DN | CSD87353Q5D | IPI47N10S-33



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