WM02P160R Specs and Replacement
Type Designator: WM02P160R
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 275 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: DFN2020-6L
WM02P160R substitution
- MOSFET ⓘ Cross-Reference Search
WM02P160R datasheet
wm02p160r.pdf
WM02P160R 20V P-Channel Enhancement Mode Power MOSFET G D Pin1 D Description S D S D S D D WM02P160R uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. G D D Features DFN2020-6L V = -20V, I = -16A DS D R ... See More ⇒
wm02p18f.pdf
WM02P18F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs V = -20V, I = -1.8A D DS D R ... See More ⇒
wm02p23m.pdf
WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS D R ... See More ⇒
wm02p40me.pdf
WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS D R ... See More ⇒
Detailed specifications: WM02N45M, WM02N50M, WM02N70ME, WM02N75M2, WM02P06F, WM02P06G, WM02P06H, WM02P06L, IRFP260, WM02P18F, WM02P20G, WM02P23M, WM02P26M, WM02P30ME, WM02P40M3, WM02P40ME, WM02P41M
Keywords - WM02P160R MOSFET specs
WM02P160R cross reference
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