WM02P160R - Даташиты. Аналоги. Основные параметры

WM02P160R 20V P-Channel Enhancement Mode Power MOSFET GDPin1DDescriptionSDSDSDDWM02P160R uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet maintain superior switching performance. GDDFeatures DFN2020-6L V = -20V, I = -16A DS DR

WM02P18F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs V = -20V, I = -1.8A DDS DR

WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR

WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR

WM02P06F P-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DSR

Document: W0803106, Rev: B WM02P06L 1 P-Channel MOSFET Features V = -20 V, I = -0.66 A DS DR

WM02P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -4.1A DS DR

WM02P56M3 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR

WM02P56M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -5.6A DS DR

WM02P06H P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs D V = -20 V, I = -0.66 A DS DR

Document:W0803119, Rev: B WM02P40M3 M P-Channel MOSFET Features V = -20 V, I = -4.0 A DS DR

WM02P06G P-Channel MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -0.66 A DS DR

Document:W0803226, Rev: B WM02P60M2 2 P-Channel MOSFET Features V = -20 V, I = -6A DS DR

WM02P30ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -3A DS DR

WM02P26M P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -20V, I = -2.6A DS DR

WM02P20G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -2A DS DR