WM02P26M Datasheet and Replacement
Type Designator: WM02P26M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOT23
WM02P26M substitution
WM02P26M Datasheet (PDF)
wm02p26m.pdf
WM02P26M P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -20V, I = -2.6A DS DR
wm02p23m.pdf
WM02P23M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20 V, I = -2.3 A DS DR
wm02p20g.pdf
WM02P20G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -2A DS DR
wm02p40me.pdf
WM02P40ME P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -20V, I = -4A DS DR
Datasheet: WM02P06F , WM02P06G , WM02P06H , WM02P06L , WM02P160R , WM02P18F , WM02P20G , WM02P23M , K4145 , WM02P30ME , WM02P40M3 , WM02P40ME , WM02P41M , WM02P56M2 , WM02P56M3 , WM02P60M2 , WM03DH34M3 .
History: PSMN2R8-40BS | R6511ENX | PSMN2R8-80BS | P0403BDG | AP70WN2K8H
Keywords - WM02P26M MOSFET datasheet
WM02P26M cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: PSMN2R8-40BS | R6511ENX | PSMN2R8-80BS | P0403BDG | AP70WN2K8H
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