WM03N115A Specs and Replacement
Type Designator: WM03N115A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
Package: SOP8
WM03N115A substitution
- MOSFET ⓘ Cross-Reference Search
WM03N115A datasheet
wm03n115a.pdf
WM03N115A 30V N-Channel Enhancement Mode Power MOSFET Description D D WM03N115A uses advanced power trench technology that has D been especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S S Features S G V = 30V, I = 11.5A DS D SOP-8L R ... See More ⇒
wm03n01g.pdf
Document W0803083, Rev D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS D R ... See More ⇒
wm03n32m.pdf
WM03N32M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 3.2A DS D R ... See More ⇒
wm03n06m.pdf
WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS D R ... See More ⇒
Detailed specifications: WM03DN06D, WM03DN85A, WM03DP50A, WM03N01G, WM03N01H, WM03N01L, WM03N06M, WM03N09F, IRFP250, WM03N32M, WM03N57M, WM03N58M, WM03N58M2, WM03N86M2, WM03P115R, WM03P27M, WM03P41M
Keywords - WM03N115A MOSFET specs
WM03N115A cross reference
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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