WM03N86M2
MOSFET. Datasheet pdf. Equivalent
Type Designator: WM03N86M2
Marking Code: 3N86
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 8.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 20.7
nC
trⓘ - Rise Time: 1.9
nS
Cossⓘ -
Output Capacitance: 125
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014
Ohm
Package:
SOT23
WM03N86M2
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM03N86M2
Datasheet (PDF)
..1. Size:829K way-on
wm03n86m2.pdf 
WM03N86M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 8.6A DS DR
9.1. Size:2401K way-on
wm03n01g.pdf
Document: W0803083, Rev: D WM03N01G 1 N-Channel Trench MOSFET Features V = 30V, I = 0.1A DS DR
9.2. Size:503K way-on
wm03n32m.pdf
WM03N32M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 3.2A DS DR
9.3. Size:466K way-on
wm03n06m.pdf
WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR
9.4. Size:810K way-on
wm03n09f.pdf
WM03N09F N-Channel Enhancement MOSFET Features G Way-on Small Signal MOSFETs D V = 30V, I = 0.93A DS DR
9.5. Size:769K way-on
wm03n115a.pdf
WM03N115A 30V N-Channel Enhancement Mode Power MOSFET DescriptionDDWM03N115A uses advanced power trench technology that has Dbeen especially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = 30V, I = 11.5A DS DSOP-8LR
9.6. Size:480K way-on
wm03n58m.pdf
WM03N58M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR
9.7. Size:351K way-on
wm03n01l.pdf
Document: W0803102, Rev: C WM03N01L N-Channel MOSFET Features V = 30V, I = 0.1A DS DR
9.8. Size:535K way-on
wm03n58m2.pdf
WM03N58M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 5.8A DS DR
9.9. Size:466K way-on
wm03n01h.pdf
WM03N01H N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 30V, I = 0.1A DS DR
9.10. Size:467K way-on
wm03n57m.pdf
WM03N57M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30 V, I = 5.8 A DS DR
Datasheet: FMP36-015P
, FMP76-01T
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, FDMS0306AS
, GMM3x120-0075X2-SMD
, FDMS0300S
, GMM3x160-0055X2-SMD
, FDMC7200S
, STP80NF70
, FDMC7200
, GMM3x60-015X2-SMD
, FDMC0310AS
, GWM100-0085X1-SL
, FDMS3610S
, GWM100-0085X1-SMD
, FDMS3606S
, GWM100-01X1-SL
.
