WM03P51A PDF and Equivalents Search

 

WM03P51A Specs and Replacement

Type Designator: WM03P51A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SOP8

WM03P51A substitution

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WM03P51A datasheet

 ..1. Size:966K  way-on
wm03p51a.pdf pdf_icon

WM03P51A

WM03P51A 30V P-Channel Enhancement Mode Power MOSFET Description D D WM03P51A uses advanced power trench technology that has been D especially tailored to minimize the on-state resistance and yet D maintain superior switching performance. S S Features S G V = -30V, I = -5.1A DS D SOP-8L R ... See More ⇒

 8.1. Size:519K  way-on
wm03p56m2.pdf pdf_icon

WM03P51A

WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS D R ... See More ⇒

 9.1. Size:538K  way-on
wm03p41m2.pdf pdf_icon

WM03P51A

WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS D R ... See More ⇒

 9.2. Size:561K  way-on
wm03p41m.pdf pdf_icon

WM03P51A

WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS D R ... See More ⇒

Detailed specifications: WM03N58M2, WM03N86M2, WM03P115R, WM03P27M, WM03P41M, WM03P41M2, WM03P42M, WM03P42M2, STF13NM60N, WM03P56M2, WM03P60M2, WM03P91A, WM04N50M, WM04P50M, WM04P56M2, WM05DP01D, WM05N02G

Keywords - WM03P51A MOSFET specs

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