WM03P51A Datasheet and Replacement
Type Designator: WM03P51A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: SOP-8L
WM03P51A substitution
WM03P51A Datasheet (PDF)
wm03p51a.pdf

WM03P51A 30V P-Channel Enhancement Mode Power MOSFET DescriptionDDWM03P51A uses advanced power trench technology that has been Despecially tailored to minimize the on-state resistance and yet Dmaintain superior switching performance. S SFeatures SG V = -30V, I = -5.1A DS DSOP-8LR
wm03p56m2.pdf

WM03P56M2 P-Channel Enhancement MOSFET Features Way-on Small Single MOSFETs V = -30 V, I = -5.6A DS DR
wm03p41m2.pdf

WM03P41M2 P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
wm03p41m.pdf

WM03P41M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -30 V, I = -4.1A DS DR
Datasheet: WM03N58M2 , WM03N86M2 , WM03P115R , WM03P27M , WM03P41M , WM03P41M2 , WM03P42M , WM03P42M2 , IRF2807 , WM03P56M2 , WM03P60M2 , WM03P91A , WM04N50M , WM04P50M , WM04P56M2 , WM05DP01D , WM05N02G .
History: MDV1542URH | YJD80N03A | STR1P2UH7 | HM6602 | TMU5N40ZG | LSGE085R041W3 | 2SK325
Keywords - WM03P51A MOSFET datasheet
WM03P51A cross reference
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History: MDV1542URH | YJD80N03A | STR1P2UH7 | HM6602 | TMU5N40ZG | LSGE085R041W3 | 2SK325



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