WM05P01G MOSFET. Datasheet pdf. Equivalent
Type Designator: WM05P01G
Marking Code: B84
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 0.65 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 5.5 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT323
WM05P01G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM05P01G Datasheet (PDF)
wm05p01g.pdf
WM05P01G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR
wm05p01m.pdf
WM05P01M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR
wm05p02m.pdf
WM05P02M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS DR
wm05p02f.pdf
Document: W0803414, Rev: A WM05P02F 1 P-Channel MOSFET Features V = -50V, I = -0.25A DS DGR
wm05p02g.pdf
WM05P02G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS DR
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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