All MOSFET. WM05P01G Datasheet

 

WM05P01G Datasheet and Replacement


   Type Designator: WM05P01G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 5.5 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: SOT323
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WM05P01G Datasheet (PDF)

 ..1. Size:502K  way-on
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WM05P01G

WM05P01G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR

 7.1. Size:487K  way-on
 wm05p01m.pdf pdf_icon

WM05P01G

WM05P01M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR

 8.1. Size:831K  way-on
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WM05P01G

WM05P02M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS DR

 8.2. Size:335K  way-on
 wm05p02f.pdf pdf_icon

WM05P01G

Document: W0803414, Rev: A WM05P02F 1 P-Channel MOSFET Features V = -50V, I = -0.25A DS DGR

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History: BSZ035N03LSG | SVF9N90F

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