WM05P01M Datasheet and Replacement
Type Designator: WM05P01M
Marking Code: B84
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 0.13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 0.65 nC
tr ⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 6 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT23
WM05P01M substitution
WM05P01M Datasheet (PDF)
wm05p01m.pdf

WM05P01M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR
wm05p01g.pdf

WM05P01G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR
wm05p02m.pdf

WM05P02M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS DR
wm05p02f.pdf

Document: W0803414, Rev: A WM05P02F 1 P-Channel MOSFET Features V = -50V, I = -0.25A DS DGR
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IXTH75N10
Keywords - WM05P01M MOSFET datasheet
WM05P01M cross reference
WM05P01M equivalent finder
WM05P01M lookup
WM05P01M substitution
WM05P01M replacement
History: IXTH75N10



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