WM05P01M Datasheet and Replacement
Type Designator: WM05P01M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT23
- MOSFET Cross-Reference Search
WM05P01M Datasheet (PDF)
wm05p01m.pdf

WM05P01M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR
wm05p01g.pdf

WM05P01G P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.13A DS DR
wm05p02m.pdf

WM05P02M P-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = -50V, I = -0.2A DS DR
wm05p02f.pdf

Document: W0803414, Rev: A WM05P02F 1 P-Channel MOSFET Features V = -50V, I = -0.25A DS DGR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 12P10G-TQ2-R | SL2343 | IRHLNA77064 | 9926B | WSD1216DN22 | BSD214SN | 2SK2059L
Keywords - WM05P01M MOSFET datasheet
WM05P01M cross reference
WM05P01M equivalent finder
WM05P01M lookup
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History: 12P10G-TQ2-R | SL2343 | IRHLNA77064 | 9926B | WSD1216DN22 | BSD214SN | 2SK2059L



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