WM06DN03DE Specs and Replacement
Type Designator: WM06DN03DE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT363
WM06DN03DE substitution
- MOSFET ⓘ Cross-Reference Search
WM06DN03DE datasheet
wm06dn03de.pdf
WM06DN03DE Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒
Detailed specifications: WM05N02M, WM05N03M, WM05P01G, WM05P01M, WM05P02F, WM05P02G, WM05P02M, WM05P20M, AON7403, WM06N03FB, WM06N03FE, WM06N03GE, WM06N03HE, WM06N03LE, WM06N03M, WM06N30M, WM06N30MS
Keywords - WM06DN03DE MOSFET specs
WM06DN03DE cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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