WM06DN03DE Datasheet and Replacement
Type Designator: WM06DN03DE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT363
WM06DN03DE substitution
WM06DN03DE Datasheet (PDF)
wm06dn03de.pdf
WM06DN03DE Dual N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR
Datasheet: WM05N02M , WM05N03M , WM05P01G , WM05P01M , WM05P02F , WM05P02G , WM05P02M , WM05P20M , EMB04N03H , WM06N03FB , WM06N03FE , WM06N03GE , WM06N03HE , WM06N03LE , WM06N03M , WM06N30M , WM06N30MS .
History: NTMFS6H848NLT1G
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History: NTMFS6H848NLT1G
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