WM06N03FE Datasheet and Replacement
Type Designator: WM06N03FE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.34 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 5.6 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: DFN1006-3L
- MOSFET Cross-Reference Search
WM06N03FE Datasheet (PDF)
wm06n03fe.pdf

WM06N03FE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A GDS DR
wm06n03fb.pdf

WM06N03FB N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs G V = 60V, I = 0.34A DS DDR
wm06n03ge.pdf

WM06N03GE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR
wm06n03le.pdf

WM06N03LE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - WM06N03FE MOSFET datasheet
WM06N03FE cross reference
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History: GSM3030 | IRF6612



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