WM06N03HE Specs and Replacement
Type Designator: WM06N03HE
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.34 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.4 nS
Cossⓘ - Output Capacitance: 5.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
Package: SOT723
WM06N03HE substitution
- MOSFET ⓘ Cross-Reference Search
WM06N03HE datasheet
wm06n03he.pdf
WM06N03HE N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒
wm06n03ge.pdf
WM06N03GE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒
wm06n03le.pdf
WM06N03LE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒
wm06n03m.pdf
WM06N03M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒
Detailed specifications: WM05P02F, WM05P02G, WM05P02M, WM05P20M, WM06DN03DE, WM06N03FB, WM06N03FE, WM06N03GE, MMIS60R580P, WM06N03LE, WM06N03M, WM06N30M, WM06N30MS, WM06P17MR, WM10N02G, WM10N02M, WM10N20M
Keywords - WM06N03HE MOSFET specs
WM06N03HE cross reference
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WM06N03HE substitution
WM06N03HE replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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