All MOSFET. WM06N03HE Datasheet

 

WM06N03HE Datasheet and Replacement


   Type Designator: WM06N03HE
   Marking Code: 72K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 0.34 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.06 nC
   trⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 5.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT723
      - MOSFET Cross-Reference Search

 

WM06N03HE Datasheet (PDF)

 ..1. Size:896K  way-on
 wm06n03he.pdf pdf_icon

WM06N03HE

WM06N03HE N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

 7.1. Size:882K  way-on
 wm06n03ge.pdf pdf_icon

WM06N03HE

WM06N03GE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

 7.2. Size:889K  way-on
 wm06n03le.pdf pdf_icon

WM06N03HE

WM06N03LE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

 7.3. Size:824K  way-on
 wm06n03m.pdf pdf_icon

WM06N03HE

WM06N03M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

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