All MOSFET. WM06N03HE Datasheet

 

WM06N03HE Datasheet and Replacement


   Type Designator: WM06N03HE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.34 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.4 nS
   Cossⓘ - Output Capacitance: 5.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SOT723
 

 WM06N03HE substitution

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WM06N03HE Datasheet (PDF)

 ..1. Size:896K  way-on
 wm06n03he.pdf pdf_icon

WM06N03HE

WM06N03HE N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

 7.1. Size:882K  way-on
 wm06n03ge.pdf pdf_icon

WM06N03HE

WM06N03GE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

 7.2. Size:889K  way-on
 wm06n03le.pdf pdf_icon

WM06N03HE

WM06N03LE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

 7.3. Size:824K  way-on
 wm06n03m.pdf pdf_icon

WM06N03HE

WM06N03M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS DR

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Datasheet: WM05P02F , WM05P02G , WM05P02M , WM05P20M , WM06DN03DE , WM06N03FB , WM06N03FE , WM06N03GE , MMIS60R580P , WM06N03LE , WM06N03M , WM06N30M , WM06N30MS , WM06P17MR , WM10N02G , WM10N02M , WM10N20M .

History: NTLUS4C12N | NTD4813N-1G

Keywords - WM06N03HE MOSFET datasheet

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