WM06N03HE PDF and Equivalents Search

 

WM06N03HE Specs and Replacement

Type Designator: WM06N03HE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.4 nS

Cossⓘ - Output Capacitance: 5.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: SOT723

WM06N03HE substitution

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WM06N03HE datasheet

 ..1. Size:896K  way-on
wm06n03he.pdf pdf_icon

WM06N03HE

WM06N03HE N-Channel Enhancement MOSFET Features D Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒

 7.1. Size:882K  way-on
wm06n03ge.pdf pdf_icon

WM06N03HE

WM06N03GE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒

 7.2. Size:889K  way-on
wm06n03le.pdf pdf_icon

WM06N03HE

WM06N03LE N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒

 7.3. Size:824K  way-on
wm06n03m.pdf pdf_icon

WM06N03HE

WM06N03M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 60V, I = 0.34A DS D R ... See More ⇒

Detailed specifications: WM05P02F, WM05P02G, WM05P02M, WM05P20M, WM06DN03DE, WM06N03FB, WM06N03FE, WM06N03GE, MMIS60R580P, WM06N03LE, WM06N03M, WM06N30M, WM06N30MS, WM06P17MR, WM10N02G, WM10N02M, WM10N20M

Keywords - WM06N03HE MOSFET specs

 WM06N03HE cross reference

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