WM10N20M MOSFET. Datasheet pdf. Equivalent
Type Designator: WM10N20M
Marking Code: 2324
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5.3 nC
trⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 14 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: SOT23
WM10N20M Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM10N20M Datasheet (PDF)
wm10n20m.pdf
WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR
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Document: W0803094, Rev: B WM10N02G G N-Channel MOSFET Features V = 100V, I = 0.2A DS DR
wm10n02m.pdf
WM10N02M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 0.2A DS DR
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: WM10N35M2
