All MOSFET. WM10N20M Datasheet

 

WM10N20M Datasheet and Replacement


   Type Designator: WM10N20M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: SOT23
 

 WM10N20M substitution

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WM10N20M Datasheet (PDF)

 ..1. Size:480K  way-on
 wm10n20m.pdf pdf_icon

WM10N20M

WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR

 9.1. Size:546K  way-on
 wm10n35m2.pdf pdf_icon

WM10N20M

WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 9.2. Size:855K  way-on
 wm10n33m.pdf pdf_icon

WM10N20M

WM10N33M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.3A DS DR

 9.3. Size:557K  way-on
 wm10n35m3m.pdf pdf_icon

WM10N20M

WM10N35M3M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

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Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: BSC032N03SG

Keywords - WM10N20M MOSFET datasheet

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