All MOSFET. WM10N35M2 Datasheet

 

WM10N35M2 Datasheet and Replacement


   Type Designator: WM10N35M2
   Marking Code: 10N3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 21 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: SOT23
 

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WM10N35M2 Datasheet (PDF)

 ..1. Size:546K  way-on
 wm10n35m2.pdf pdf_icon

WM10N35M2

WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 6.1. Size:557K  way-on
 wm10n35m3m.pdf pdf_icon

WM10N35M2

WM10N35M3M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS DR

 8.1. Size:855K  way-on
 wm10n33m.pdf pdf_icon

WM10N35M2

WM10N33M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.3A DS DR

 9.1. Size:480K  way-on
 wm10n20m.pdf pdf_icon

WM10N35M2

WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS DR

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Datasheet: WM06N03M , WM06N30M , WM06N30MS , WM06P17MR , WM10N02G , WM10N02M , WM10N20M , WM10N33M , IRF840 , WM10N35M3M , WM10P20M2 , WM15P10M2 , WM4C62160A , WM6C61042A , WMAA4N65D1B , WMK4N65D1B , WML4N65D1B .

History: IRF7205PBF | STL17N3LLH6 | STD25NF10 | NCEAP4075GU

Keywords - WM10N35M2 MOSFET datasheet

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