WM10N35M2 Specs and Replacement
Type Designator: WM10N35M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 32 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOT23
WM10N35M2 substitution
WM10N35M2 datasheet
wm10n35m2.pdf
WM10N35M2 N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS D R ... See More ⇒
wm10n35m3m.pdf
WM10N35M3M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.5A DS D R ... See More ⇒
wm10n33m.pdf
WM10N33M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 3.3A DS D R ... See More ⇒
wm10n20m.pdf
WM10N20M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 100V, I = 2A DS D R ... See More ⇒
Detailed specifications: WM06N03M , WM06N30M , WM06N30MS , WM06P17MR , WM10N02G , WM10N02M , WM10N20M , WM10N33M , IRF840 , WM10N35M3M , WM10P20M2 , WM15P10M2 , WM4C62160A , WM6C61042A , WMAA4N65D1B , WMK4N65D1B , WML4N65D1B .
Keywords - WM10N35M2 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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