WM10N35M2 MOSFET. Datasheet pdf. Equivalent
Type Designator: WM10N35M2
Marking Code: 10N3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 32 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: SOT23
WM10N35M2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WM10N35M2 Datasheet (PDF)
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