WMB010N04LG4
MOSFET. Datasheet pdf. Equivalent
Type Designator: WMB010N04LG4
Marking Code: 010N04L4
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 65.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 200
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 118
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 1495
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.001
Ohm
Package:
PDFN5060-8L
WMB010N04LG4
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WMB010N04LG4
Datasheet (PDF)
..1. Size:616K way-on
wmb010n04lg4.pdf
WMB010N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB010N04LG4 uses Wayon's 4th generation power trench MOSFET Gtechnology that has been especially tailored to minimize the on-state sssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
9.1. Size:647K way-on
wmb017n03lg2.pdf
WMB017N03LG2 30V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDWMB017N03LG2 uses Wayon's 2nd generation power trench MOSFET DDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This device sssGsis well suited for high efficiency fast switching applications. PDFN5
9.2. Size:977K way-on
wmb014n04lg4.pdf
WMB014N04LG4 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDD DWMB014N04LG4 uses Wayon's 4th generation power trench GMOSFET technology that has been especially tailored to minimize the sssssGson-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN506
9.3. Size:639K way-on
wmb014n06hg4.pdf
WMB014N06HG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06HG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
9.4. Size:626K way-on
wmb018n04lg2.pdf
WMB018N04LG2 40V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB018N04LG2 uses Wayon's 2nd generation power trench MOSFET D Dtechnology that has been especially tailored to minimize the on-state Gsssssresistance and yet maintain superior switching performance. This device Gsis well suited for high efficiency fast switching applications. PDFN506
9.5. Size:641K way-on
wmb014n06lg4.pdf
WMB014N06LG4 60V N-Channel Enhancement Mode Power MOSFET DescriptionD DDDDDWMB014N06LG4 uses Wayon's 4th generation power trench MOSFET DDtechnology that has been especially tailored to minimize the on-state GsssssGsresistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. PDFN50
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